Two-dimensional electron solid formation in Si inversion layers
نویسندگان
چکیده
منابع مشابه
Very Low Electron Density in Undoped Enhancement-Mode Si/SiGe Two- Dimensional Electron Gases with Thin SiGe Cap Layers
We report the lowest electron density (4.9×10 cm and 1.1×10 cm) and high mobility (~400,000 cm/Vs and ~200,000 cm/Vs) of undoped enhancement-mode Si/SiGe two-dimensional electron gases comparing to samples previously reported with similar thin SiGe cap thickness (55nm and 27nm). The dominant scattering mechanism over a wide range of two-dimensional electron density in both samples is the scatte...
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We show by simulation that electron mobility and velocity overshoot are greater when strained inversion layers are grown on SiGe-On-insulator substrates ~strained Si/SiGe-OI! than when unstrained silicon-on-insulator ~SOI! devices are employed. In addition, mobility in these strained inversion layers is only slightly degraded compared with strained bulk Si/SiGe inversion layers, due to the phon...
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We present results of Monte-Carlo simulations for finite 2D single and bilayer systems. Strong Coulomb correlations lead to arrangement of particles in configurations resembling a crystal lattice. For binary layers, there exists a particularly rich variety of lattice symmetries which depend on the interlayer separation d. We demonstrate that in these mesoscopic lattices there exist two fundamen...
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We show by Monte Carlo simulation that electron mobility is greater when strained-silicon inversion layers are grown on SiGe-on-insulator substrates than when unstrained-silicon-on-insulator devices are employed ~as experimentally observed!. However, the electron mobility in strained-Si/SiGe-on-insulator inversion layers is strongly dependent on the strained-silicon layer thickness, TSi , due t...
متن کاملVELOCITY OVERSHOOT OF ELECTRONS AND HOLES IN Si INVERSION LAYERS
Velocity overshoot of inversion layer electrons and holes is studied experimentally and analytically in special test structures with nominally uniform electric field. The data were used to calibrate energy relaxation parameters in a commercial simulator MEDIC1 ver. 2.0. We propose an analytical model for velocity overshoot and show that it agrees well with experimental data. The amount of hole ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 1991
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.44.13513